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MRF374A 1 rf device data freescale semiconductor rf power field - effect transistor n - channel enhancement - mode lateral mosfet designed for broadband commercial and industrial applications with frequen- cies from 470 to 860 mhz. the high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 28/32 volt transmitter equipment. ? typical two - tone performance @ 860 mhz, 32 volts, narrowband fixture output power ? 130 watts pep power gain ? 17.3 db efficiency ? 41% imd ? - 32.5 dbc ? capable of handling 10:1 vswr @ 32 vdc, 857 mhz, 130 watts cw output power features ? integrated esd protection ? excellent thermal stability ? characterized with differential large - signal impedance parameters ? rohs compliant table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +70 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 302 1.72 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.58 c/w table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) document number: MRF374A rev. 5, 5/2006 freescale semiconductor technical data 470- 860 mhz, 130 w, 32 v lateral n - channel broadband rf power mosfet case 375f - 04, style 1 ni - 650 MRF374A ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor MRF374A table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) drain - source breakdown voltage (v gs = 0 vdc, i d =10 a) v (br)dss 70 ? ? vdc zero gate voltage drain current (v ds = 32 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (1) (v ds = 10 v, i d = 200 a) v gs(th) 2 2.9 4 vdc gate quiescent voltage (2) (v ds = 32 v, i d = 100 ma) v gs(q) 2.5 3.3 4.5 vdc drain - source on - voltage (1) (v gs = 10 v, i d = 3 a) v ds(on) ? 0.41 0.45 vdc dynamic characteristics (1) input capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c iss ? 97.3 ? pf output capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c oss ? 49 ? pf reverse transfer capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c rss ? 1.91 ? pf functional characteristics, narrowband operation (2) (in freescale MRF374A narrowband circuit, 50 ohm system) common source power gain (v dd = 32 vdc, p out = 130 w pep, i dq = 400 ma, f1 = 857 mhz, f2 = 863 mhz) g ps 16 17.3 ? db drain efficiency (v dd = 32 vdc, p out = 130 w pep, i dq = 400 ma, f1 = 857 mhz, f2 = 863 mhz) 36 41.2 ? % intermodulation distortion (v dd = 32 vdc, p out = 130 w pep, i dq = 400 ma, f1 = 857 mhz, f2 = 863 mhz) imd ? - 32.5 -28 db 1. each side of device measured separately. 2. measurement made with device in push - pull configuration.
MRF374A 3 rf device data freescale semiconductor figure 1. MRF374A narrowband test circuit component layout pcb substrate (30 mil thick) motorola vertical 860 mhz balun rogers ro3010 (50 mil thick) 55 mil slot cut out to accept balun input (50 ohm microstrip) output 2 (12.5 ohm microstrip) ground vertical balun mounting detail note: trim balun pcb so that a 35 mil "tab" fits into the main pcb slot" resulting in balun solder pads being level with the pcb substrate solder pads when fully inserted. output 1 (12.5 ohm microstrip) mrf374 rev 3a c1 c2 c3 r3a r2 l4 l3a l2a c4a l3b r3b c4b c5 c6 c7a r1a r1b l2b c7b c13a c13b c10 c9a c9b r4a l1a c14a r4b l1b c14b c11 c12a c12b rf input rf output v gs v gs v dd v dd freescale has begun the transition of marking pr inted circuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
4 rf device data freescale semiconductor MRF374A table 5. MRF374A narrowband test circuit component layout designations and values designation description c1 0.8 pf chip capacitor, atc c2 2.2 pf chip capacitor, atc c3 0.5 - 5.0 pf variable capacitor, johanson gigatrim c4a, b, c12a, b 47 pf chip capacitors, atc c5 1.0 pf chip capacitor, atc c6 10 pf chip capacitor, atc c7a, b, c14a, b 100,000 pf chip capacitors, atc c9a, b 15 pf chip capacitors, atc c10 3.9 pf chip capacitor, atc c11 5.1 pf chip capacitor, atc c13a, b 2.2 f, 100 v chip capacitors, vishay #vj3640y225kxbat l1a, b 5.0 nh, coilcraft #a02t l2a, b 8.0 nh, coilcraft #a03t l3a, b 130.0 nh, coilcraft #132 - 11smj l4 8.8 nh, coilcraft #1606 - 8 r1a, b 51 , 1/4 w chip resistors, vishay dale (1210) r2 10 , 1/2 w chip resistor, vishay dale (2010) r3a, b 3.3 k , 1/8 w chip resistors, vishay dale (1206) r4a, b 180 , 1/4 w chip resistors, vishay dale (1210) pcb mrf374 printed circuit board rev 03, rogers ro4350, height 30 mils, r = 3.48 balun b1a, b vertical 860 mhz narrowband balun, printed circuit board rev 01, rogers ro3010, height 50 mils, r = 10.2
MRF374A 5 rf device data freescale semiconductor typical characteristics 900 15 18 400 v dd = 32 vdc p out = 100 w (pep) i dq = 750 ma frequency = 6 mhz g ps , power gain (db) 17.5 17 16.5 16 15.5 800 700 600 500 28 vdc figure 2. gain versus frequency in broadband circuit figure 3. intermodulation distortion versus frequency in broadband circuit figure 4. drain efficiency versus frequency in broadband circuit f, frequency (mhz) f, frequency (mhz) f, frequency (mhz) figure 5. performance in broadband circuit figure 6. capacitance versus voltage figure 7. cofdm intermodulation, gain and efficiency versus output power in broadband circuit v ds , drain?source voltage (volts) 900 ?50 ?15 400 intermodulation distortion (dbc) imd, v dd = 28 vdc 32 vdc ?20 ?25 ?30 ?35 ?40 ?45 800 700 600 500 900 20 45 400 v dd = 28 vdc , drain efficiency (%) 32 vdc 800 700 600 500 40 35 30 25 900 0 20 400 20 40 irl g ps input return loss (db) irl, g ps , power gain (db) , drain efficiency (%) d 15 35 10 30 525 800 700 600 500 d f, frequency (mhz) 60 0 200 0 0 20 c rss c oss capacitance (pf) c oss c iss 150 15 100 10 50 5 50 40 30 20 10 ,c iss , capacitance (pf) c rss , 100 0 40 0.1 ?60 ?20 g ps imr intermodulation (dbc) imr, 35 ?25 30 ?30 25 ?35 20 ?40 15 ?45 10 ?50 5 ?55 10 1 p out , output power (watts) avg. , drain efficiency (%), g ps , power gain (db) p out = 100 w (pep) i dq = 750 ma frequency = 6 mhz p out = 100 w (pep) i dq = 750 ma frequency = 6 mhz v dd = 32 vdc p out = 100 w (pep) i dq = 750 ma frequency = 6 mhz v dd = 32 vdc i dq = 1.1 a f = 860 mhz 2 k mode cofdm 64 qam 10.5 peak/avg. ratio
6 rf device data freescale semiconductor MRF374A typical characteristics figure 8. 8 - vsb intermodulation, gain and efficiency versus output power in broadband circuit figure 9. power gain versus peak output power in narrowband circuit figure 10. intermodulation distortion versus peak output power in narrowband circuit figure 11. drain efficiency versus peak output power in narrowband circuit p out , output power (watts) pep p out , output power (watts) pep p out , output power (watts) pep 100 0 40 0.1 ?60 ?20 g ps imr v dd = 32 vdc i dq = 1.1 a f = 860 mhz , drain efficiency (%), g ps , power gain (db) 35 ?25 30 ?30 25 ?35 20 ?40 15 ?45 10 ?50 5 ?55 10 1 13 19 i dq = 1.0 a 800 ma g ps , power gain (db) 600 ma 400 ma 200 ma 18 17 16 15 14 100 ?55 ?20 1 i dq = 200 ma 400 ma intermodulation distortion (dbc) imd, ?25 ?30 ?35 ?40 ?45 ?50 10 600 ma 800 ma 1.0 a 100 0 50 1 v dd = 32 vdc i dq = 800 ma f = 857 mhz 40 30 20 10 10 intermodulation (dbc) imr, , drain efficiency (%) d 100 110 v dd = 32 vdc f = 857 mhz frequency = 6 mhz frequency = 6 mhz v dd = 32 vdc f = 857 mhz frequency = 6 mhz p out , output power (watts) avg.
MRF374A 7 rf device data freescale semiconductor typical characteristics figure 12. power gain versus peak output power in broadband circuit figure 13. power gain versus peak output power in broadband circuit p out , output power (watts) pep p out , output power (watts) pep 15 18 470 mhz v dd = 28 vdc i dq = 750 ma tone spacing = 6 mhz g ps , power gain (db) 560 mhz 760 mhz 660 mhz 860 mhz 17.5 17 16.5 16 15.5 15 18 470 mhz v dd = 32 vdc i dq = 750 ma tone spacing = 6 mhz g ps , power gain (db) 560 mhz 760 mhz 660 mhz 860 mhz 17.5 17 16.5 16 15.5 860 mhz 760 mhz figure 14. drain efficiency versus peak output power in broadband circuit figure 15. drain efficiency versus peak output power in broadband circuit figure 16. intermodulation distortion versus peak output power in broadband circuit figure 17. intermodulation distortion versus peak output power in broadband circuit p out , output power (watts) pep p out , output power (watts) pep p out , output power (watts) pep p out , output power (watts) pep 45 , drain efficiency (%) 35 25 15 5 860 mhz v dd = 28 vdc i dq = 750 ma tone spacing = 6 mhz 560 mhz 470 mhz 0 860 mhz v dd = 32 vdc i dq = 750 ma tone spacing = 6 mhz , drain efficiency (%) 40 30 20 10 ?50 ?25 intermodulation distortion (dbc) imd, ?30 ?35 ?40 ?45 v dd = 28 vdc i dq = 750 ma tone spacing = 6 mhz 470 mhz 660 mhz 560 mhz intermodulation distortion (dbc) imd, ?50 ?25 ?30 ?35 ?40 ?45 860 mhz v dd = 32 vdc i dq = 750 ma tone spacing = 6 mhz 760 mhz 470 mhz 660 mhz 560 mhz v dd = 28 vdc v dd = 32 vdc 100 110 100 110 100 110 100 110 100 110 100 110 660 mhz 470 mhz 660 mhz 560 mhz
8 rf device data freescale semiconductor MRF374A figure 18. series equivalent source and load impedance f mhz z source z load 845 860 875 3.33 - j2.42 2.73 - j3.10 3.03 - j2.39 4.56 - j2.86 4.22 - j3.16 3.87 - j3.52 v dd = 32 v, i dq = 400 ma, p out = 130 w pep z o = 4 z source z load f = 845 mhz f = 875 mhz f = 845 mhz f = 875 mhz z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. z source z load input matching network device under test output matching network ? ?+ +
MRF374A 9 rf device data freescale semiconductor notes
10 rf device data freescale semiconductor MRF374A notes
MRF374A 11 rf device data freescale semiconductor package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. d f e h 2 3 1 r (lid) q 2x c seating plane case 375f - 04 issue e k 4 pl style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source dim min max min max millimeters inches a 1.135 1.145 28.80 29.10 b 0.225 0.235 5.72 5.97 c 0.135 0.178 3.43 4.52 d 0.210 0.220 5.33 5.59 e 0.055 0.065 1.40 1.65 f 0.004 0.006 0.11 0.15 g h 0.077 0.087 1.96 2.21 k l n 0.638 0.650 16.20 16.50 q r 0.227 0.233 5.77 5.92 4 0.900 bsc 0.220 0.250 0.260 bsc 22.86 bsc 5.59 6.35 6.60 bsc g b m bbb m l m a m bbb b m t b b (flange) m n t m a m bbb b m t (insulator) m a m ccc b m t (lid) a (flange) a m s (insulator) m a m bbb b m t m a m ccc b m t 5 a m 0.643 0.657 16.33 16.69 s 0.225 0.235 5.715 5.97 .125 .135 3.175 3.43 bbb 0.010 bsc 0.254 bsc ccc 0.015 bsc 0.381 bsc t ni - 650
12 rf device data freescale semiconductor MRF374A information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MRF374A rev. 5, 5/2006

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